In this paper results of AC measurements of phase angle theta, capacity C-p and loss tangent tg delta dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity sigma and relative permittivity epsilon(r) were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.