The following work presents the results of AC measurements of a SiOx/ZrO2 multilayered nanocomposite subjected to annealing at high temperature. This nanometric structure was deposited on a p-type silicon substrate by alternating vacuum evaporation of two appropriate separate targets. Then it was annealed at 1100 degrees C which caused creation of silicon nanoparticles in double dielectric matrix - layers of ZrO2 and interlayer SiO2. Electrical measurements were carried out in the frequency range from 50 Hz to 10(6) Hz and in temperature range from 100 K to 375 K. The measured parameters were impedance R-p, capacitance C-p, phase shift angle theta and dielectric loss tangent tg delta. What is more, dependences of admittance sigma and dielectric permittivity epsilon of the material were determined. On the basis of these values, AC charge transport mechanism and dielectric relaxation mechanisms in this type of systems were proposed.